View ILA03N60_108912.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
LightMOS Power Transistor
C
* * * * * * *
New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150C operating temperature FullPak isolates 2.5 kV AC (1 min.)
P-TO-220-3-1 (TO-220AB)
G
E
P-TO-220-3-31 (TO-220 FullPak)
P-TO-263-3-2 (D2-PAK) (TO-263AB)
P-TO-252-3-1 (D-PAK) (TO-252AA)
Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter
VCE 600V 600V 600V 600V
IC 3.0A 3.0A 3.0A 3.0A
VCE(sat),Tj=25C 2.9V 2.9V 2.9V 2.9V
Tj,max 150C 150C 150C 150C Symbol VCE IC
Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1
Ordering Code Q67040-S4626 Q67040-S4628 Q67040-S4627 Q67040-S4625
Value 600 4.5 3
Unit V A
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.8A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC 3A, VCE 450V, Tjmax 150C Power dissipation (TC = 25C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J-STA-020A)
1
ICpul s IF
9 5.5 4 2.5
IFpul s EAS VGE dv/dt Ptot Tstg Ts
9 5.5 0.32 30 1
1
mJ V V/ns W C
27 -55...+150 255
Reverse diode of transistor is commutated with same device according to figure C. With application relevant values IC 1.5A, CSnubber = 1 nF and RG 50, dv/dt of the reverse diode is within its specification. 1 Rev. 1.1 Nov-03
Power Semiconductors
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
Symbol RthJC RthJCD Conditions TO-220 - FullPak Other packages TO-220 - FullPak Other packages RthJA P-TO-252-3-1 75
1
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Therm. resistance, junction - ambient R t h J A SMD version, device on PCB: @ min. footprint @ 6cm cooling area
2
Max. Value 7.6 4.7 12 10 62
Unit K/W
50
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 10 V , I C = 3. 0 A T j =2 5 C T j =1 5 0 C V G E = 10 V , I C = 0. 8 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 3 .0 A T j =2 5 C T j =1 5 0 C V G E = 0V , I F = 0 .8 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 A, V C E = V G E V C E = 60 0 V, V G E =0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance
1
Symbol
Conditions
Value min. 600 2.1 typ. 2.3 2.7 1.5 1.5 1.5 1.6 1.8 max. 2.9
Unit
V
V 1.0 1.0 3.0 1 1.5 3.9 20 250 100 nA S V A
IGES gfs
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 3. 0 A
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
V C E = 25 V , V G E = 0V , f= 1 MH z V G E = 0V , V C E = 0V t o 4 8 0 V QGE QGC QG Vm QGE QGC QG Vm V C E = 40 0 V, I C = 0. 8 A, V G E = 10 V V C E = 40 0 V, I C = 3. 0 A, V G E = 10 V 1 5.5 8.5 6.5 0.5 4.0 8 3.5 V V nC nC 110 6 4 3,7 pF pF
Capacities, Gate Charge, at Tj=25 C Input capacitance Ciss Output capacitance Reverse transfer capacitance Effective Output Capacitance (Energy related) Gate to emitter charge Gate to collector charge Gate total charge Gate plateau voltage Gate to emitter charge Gate to collector charge Gate total charge Gate plateau voltage Coss Crss Co(er)
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) tr td(off) tf Eon Eoff Eoff
3
Symbol
Conditions
Value min. typ. 15 35 100 100 12 20 8 max. -
Unit
V C C = 40 0 V, I C = 0. 8 A, V G E = 0/ 10 V , R G = 60 , C S n u b b e r = 0n F ( C S n u b b e r : Sn u bb er c ap ac it or ) C S n u b b e r = 1n F
ns
J
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) tr td(off) tf Eon
3
Symbol
Conditions
Value min. typ. 20 45 120 120 15 28 12 max. -
Unit
Eoff Eoff
V C C = 40 0 V, I C = 0. 8 A, V G E = 0/ 10 V , R G = 60 , C S n u b b e r =0 nF ( C S n u b b e r : Sn u bb er c ap ac it or ) C S n u b b e r = 1n F
ns
J
3
E o n includes SDP04S60 diode commutation losses 3 Rev. 1.1 Nov-03
Power Semiconductors
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=25 C Parameter
Reverse diode Characteristic (switching in half bridge configuration with same transistor according to figure C) Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current trr Qrr Irrm d i r r /d t trr Qrr Irrm d i r r /d t V R = 4 00 V , I F = 3 A, V G E = 0/ 10 V , R G = 80 V R = 4 00 V , I F = 0. 8 A, V G E = 0/ 10 V , R G = 80 90 0.27 5.5 300 250 0.75 8 300 ns C A A/s ns C A A/s
Power Semiconductors
4
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
10A tp=4s 8s
10A
tp=4s 8s
IC, COLLECTOR CURRENT
15s 1A 50s 200s 0,1A 1ms DC 0,01A 1V 10V 100V 1000V
IC, COLLECTOR CURRENT
15s 1A 50s
200s 0.1A 1ms DC
0.01A 1V 10V 100V 1000V
f, SWITCHING FREQUENCY Figure 1: Safe operating area (FullPak) (D = 0, TC = 25C, Tj 150C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2: Safe operating area (Other Packages) (D = 0, TC = 25C, Tj 150C)
30W
6A
25W
Ptot, POWER DISSIPATION
20W
IC, COLLECTOR CURRENT
4A
15W
10W
2A
5W
0A 25C
0W 25C
50C
75C
100C
125C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 10V, Tj 150C)
Power Semiconductors
5
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
10A
10A
8A
8A
VGE=15V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
6A
4A
10V 9V 8V 7V 6V 5V
VGE=15V 6A 10V 9V 8V 7V 6V 5V
4A
2A
2A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V -50C 0C 50C 100C 150C Ic=1A Ic=0.5A Ic=3A Ic=4A
8A
Tj= +25C +150C
IC, COLLECTOR CURRENT
6A
4A
2A
0A 0V
2V
4V
6V
8V
10V
12V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 10V)
Power Semiconductors
6
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
td(off) tf
tf 100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
td(off)
tr
tr
td(on)
td(on) 10ns 20 40
10ns 0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
60
80
100
120
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, RG = 80, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, IC = 1A, Dynamic test circuit in Figure E)
80J
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
3.4V
70J
*) Eon includes losses due to diode recovery.
3.2V
E, SWITCHING ENERGY LOSSES
60J 50J 40J 30J 20J 10J 0J 0,5A
Eoff
3.0V 2.8V 2.6V 2.4V 2.2V 2.0V -50C 0C 50C 100C 150C
Eon*
Eoff, C
Snubber
=1nF
1,0A
1,5A
2,0A
2,5A
3,0A
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 30A)
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, RG = 80, CSnubber=0/1nF Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
34J 32J 30J 28J 26J 24J 22J 20J 18J 16J 14J 12J 10J 20 40 60 80 100 120 Eoff, C
Snubber
35J
Eoff
*) Eon includes losses due to diode recovery. *) Eon includes losses due to diode recovery.
30J
E, SWITCHING ENERGY LOSSES
25J Eoff 20J
Eon*
15J
Eon*
=1nF
10J Eoff, C 5J
Snubber
=1nF
50C
100C
150C
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+10V, IC = 1A, CSnubber=0/1nF Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+10V, IC = 1A, RG = 80, CSnubber=0/1nF Dynamic test circuit in Figure E)
14V 12V
14V 12V
VGE, GATE-EMITTER VOLTAGE
10V 8V 6V 4V 2V 0V 0nC
VGE, GATE-EMITTER VOLTAGE
120V
480V
120V 10V 8V 6V 4V 2V 0V 0nC
480V
2nC
4nC
6nC
8nC
10nC 12nC
2nC
4nC
6nC
8nC
10nC 12nC
QGE, GATE CHARGE Figure 16. Typical gate charge (IC = 0.8A)
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A)
Power Semiconductors
8
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
10 K/W
1
1
ZthJCD, TRANSIENT THERMAL IMPEDANCE
ZthJCT, TRANSIENT THERMAL IMPEDANCE
10 K/W
10 K/W
0
R,(K/W) 3.46 0.798 0.662 D=0.5 1.84 0.2
3.99 0.368 0.00973 8.52*10-4
R2
, (s)
D=0.5 10 K/W
0
R,(K/W) 1.76 2.98 0.620 0.915
R1
, (s) 5.30 1.59 0.0719 0.00654
R2
0.2 0.1 0.05 0.02 0.01 single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
0.1 0.05 0.02 10 K/W
-1
R1
0.01 single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
10s 100s 1ms 10ms 100ms
1s
10s
100s
10 K/W 10s 100s 1ms 10ms 100ms
-1
1s
10s
100s
tp, PULSE WIDTH Figure 18: IGBT transient thermal impedance as a function of pulse width (FullPak) (D = tp / T)
tp, PULSE WIDTH Figure 19: Diode transient thermal impedance as a function of pulse width (FullPak) (D = tp / T)
10 K/W
1
10 K/W
0
0.2 0.1
R,(K/W) 1.186 1.856 1.458
ZthJCD, TRANSIENT THERMAL IMPEDANCE
ZthJCT, TRANSIENT THERMAL IMPEDANCE
D=0.5
, (s) 0.0466 2.220*10-3 3.616*10-4
R2
10 K/W
0
D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse
R1
R,(K/W) 0.907 1.088 3.762 4.043
, (s) 4.532*10-2 5.957*10-3 8.797*10-4 1.667*10-4
0.05 10 K/W
-1
R1
R2
0.02 0.01 single pulse
C 1 = 1 / R 1 C 2 = 2 /R 2
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms
100ms
1s
10 K/W 10s
-1
100s
1ms
10ms
100ms
1s
tp, PULSE WIDTH Figure 20: IGBT transient thermal impedance as a function of pulse width (Other Packages) (D = tp / T)
tp, PULSE WIDTH Figure 21: Diode transient thermal impedance as a function of pulse width (Other Packages) (D = tp / T)
Power Semiconductors
9
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
4A
1.7V 1.6V
3A
IF=4A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V 1.4V 1.3V 1.2V 1.1V 1.0V
IF=2A
2A 150C 100C 1A 25C -55C
IF=1A
IF=0.5A
0A 0.0V
0.5V
1.0V
1.5V
0.9V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 20. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 21. Typical diode forward voltage as a function of junction temperature
100pF
Ciss
C, CAPACITANCE
10pF Coss Crss 0V 10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
Power Semiconductors
10
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
90 % VG E
10% V GE t
VC E
90 % V CE
90% VC E
10% V CE td(off) tf td(on) tr
10 % V CE t
F igure A. Definition of switching times
I,v dIF /dt tr r=tS+ tF Qrr =QS+QF IF tS QS trr tF U I rrm QF 10% Irrm t VR RG 1/2L D.U.T (IGBT) 1/2 L
D.U.T (Diode)
C
dIrr /dt 90% Irrm
Figure B . Definition of diodes switching characteristics
Figure C. Dynamic tes t circuit
Power Semiconductors
11
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
P-TO220-3-31
dimensions symbol
[mm] min max 10.63 16.12 0.78 3.25 6.56 13.73 3.43 0.63 1.36 4.83 2.83 2.62 min 0.4084 0.6245 0.0256 0.124 0.2384 0.5304 0.125 0.0177 0.0484 0.1800 0.1013 0.0990
[inch] max 0.4184 0.6345 0.0306 0.128 0.2584 0.5404 0.135 0.0247 0.0534 0.1900 0.1113 0.1030
A B C D E F G H K L M N P T
10.37 15.86 0.65 3.15 6.05 13.47 3.18 0.45 1.23 4.57 2.57 2.51
2.95 typ.
0.1160 typ.
2.54 typ.
0.100 typ.
Please refer to mounting instructions (application note AN-TO220-3-31-01)
TO-220AB
symbol
dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 4.50 1.40 2.72 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 0.1772 0.0551 0.1071
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 4.30 1.17 2.30
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 0.1693 0.0461 0.0906
2.54 typ.
0.1 typ.
Power Semiconductors
12
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
TO-263AB (D2Pak)
symbol dimensions
[mm] min max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 min 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40
[inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157
A B C D E F G H K L M N P Q R S T U V W X Y Z
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
13
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
TO-252AA (DPak)
symbol [mm] dimensions symbol
min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 F G H K L M N P R S T U A B C D
min 6.40 5.25 (0.65) 0.63 E 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 F G H K L M N P R S T U A B C D
Power Semiconductors
14
Rev. 1.1 Nov-03
^
ILA03N60, ILP03N60 ILB03N60, ILD03N60
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2003 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
15
Rev. 1.1 Nov-03

▲Up To Search▲

Price & Availability of ILA03N60

	To Download ILA03N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .